Impurity gettering effects in separation-by-implanted-oxygen (SIMOX) wafers: What getters what, where and how

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 129-132

  Yankov, R A ^a   Kaschny, J R ^a   Fichtner, P F P ^a   Mucklich A ^a   Kreissig U ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; CRYSTAL IMPURITIES; CRYSTAL MICROSTRUCTURE; ION IMPLANTATION; IRON; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE STRUCTURES; SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY; ANNEALING; COLOR CENTERS; MASS SPECTROMETRY;

ELASTIC RECOIL DETECTION; IMPURITY GETTERING EFFECTS; SEPARATION BY IMPLANTATION OXYGEN (SIMOX); PROXIMITY GETTERING; SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);

SILICON WAFERS; SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0031150241     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00032-4     Document Type: Article

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