GaInAs/GaAs single mode vertical cavity surface emitting laser (VCSEL) array on GaAs (311)B

IEICE Transactions on Electronics

Volumn E84-C, Issue 3, 2001, Pages 331-338

  Arai, M ^a   Nishiyama, N ^a   Azuchi, M ^a   Shinada, S ^a   Matsutani, A ^a   Koyama, F ^a   Iga, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Array; GaAs (311)B; Polarization; VCSEL

Indexed keywords

DATA COMMUNICATION SYSTEMS; ELECTRIC CURRENTS; LASER MODES; LIGHT MODULATION; LIGHT POLARIZATION; MULTIMODE FIBERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; SIGNAL NOISE MEASUREMENT; THERMAL NOISE; THRESHOLD VOLTAGE;

GALLIUM INDIUM ARSENIDE; ORTHOGONAL POLARIZATION SUPPRESSION RATIO; PSEUDORANDOM BIT SEQUENCE; RELATIVE INTENSITY NOISE; SINGLE MODE SUPPRESSION RATIO; VERTICAL CAVITY SURFACE EMITTING LASER;

SEMICONDUCTOR LASERS;

EID: 0035281888     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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