Multi-oxide layer structure for single-mode operation in vertical-cavity surface-emitting lasers

IEEE Photonics Technology Letters

Volumn 12, Issue 6, 2000, Pages 606-608

  Nishiyama, Nobuhiko ^a   Arai, Masakazu ^a   Shinada, Satoshi ^a   Suzuki, Kouichi ^a   Koyama, Fumio ^a   Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES; THRESHOLD VOLTAGE;

MULTI OXIDE LAYER STRUCTURE; SINGLE MODE OPERATION; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0034206722     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.849058     Document Type: Article

References (13)

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