Lasing characteristics of InGaAs-GaAs polarization controlled vertical-cavity surface-emitting laser grown on GaAs (311) B substrate

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 530-536

  Nishiyama, Nobuhiko ^a   Mizutani, Akimasa ^a   Hatori, Nobuaki ^a,b   Arai, Masakazu ^a   Koyama, Fumio ^a,b   Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LASER MODES; LASER RESONATORS; LIGHT MODULATION; LIGHT POLARIZATION; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING GALLIUM ARSENIDE; STABILITY;

ANISOTROPIC GAIN; HIGH SPEED MODULATION; LASING CHARACTERISTICS; ORTHOGONAL POLARIZATION SUPPRESSION RATIO; POLARIZATION CONTROL; POLARIZATION STABILITY; SIDEMODE SUPPRESSION RATIO; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0033123899     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788415     Document Type: Article

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