AlAs oxidation system with H2O vaporizer for oxide-confined surface emitting lasers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 6 A, 2000, Pages 3468-3469

  Arai, Masakazu ^a   Nishiyama, Nobuhiko ^a   Shinada, Satoshi ^a   Koyama, Fumio ^a   Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AlAs; Oxidation; Surface emitting laser

Indexed keywords

EVAPORATION; OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS; WATER;

VAPORIZERS; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0034204721     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.3468     Document Type: Article

References (6)

1. W. T. Tsang: Appl. Phys. Lett. 33 (1978) 426.
2. M. H. MacDougal, P. D. Dapkus, V. Putlikov, H. Zhao and G. M. Yang: IEEE Photon. Technol. Lett. 7 (1995) 229.
3. Y. Hayashi, T. Mukaihara, N. Hatori, N. Ohnoki, A. Matsutani, F. Koyama and K. Iga: IEEE Photon. Technol. Lett. 7 (1995) 1234.
4. K. L. Lear, K. D. Choquatte, R. P. Schneider, S. P. Kilcoyne and K. M. Geib: Electron. Lett. 30 (1994) 2043.
5. R. Jäger, M. Grabherr, C. Jung, R. Michalzik, G. Reiner, B. Wigl and K. J. Ebeling: Electron. Lett. 33 (1997) 330.
6. N. Ohnoki, F. Koyama and K. Iga: Appl. Phys. Lett. 73 (1998) 3262.