Polarization-controlled 850-nm-wavelength vertical-cavity surface-emitting lasers grown on (311)B substrates by metal-organic chemical vapor deposition

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 537-545

  Uenohara, Hiroyuki ^a,c,d   Tateno, Kouta ^a   Kagawa, Toshiaki ^a,c   Ohiso, Yoshitaka ^a,e   Tsuda, Hiroyuki ^a,c,f   Kurokawa, Takashi ^a,b   Amano, Chikara ^a  

^a NTT CORPORATION   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^d PRINCETON UNIVERSITY   (United States)

^e KEIO UNIVERSITY   (Japan)

^f WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BIT ERROR RATE; DATA COMMUNICATION SYSTEMS; ELECTRIC CURRENTS; LIGHT MODULATION; LIGHT POLARIZATION; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SEMICONDUCTING BORON;

ANISOTROPIC OPTICAL GAIN; BIAS CURRENT; ORTHOGONAL POLARIZATION SUPPRESSION RATIO; POLARIZATION CONTROL; POLARIZATION STABILITY; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0033123901     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788416     Document Type: Article

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