Highly efficient 1.5GHz Si power MOSFET for digital cellular front end

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 1992-May, Issue , 1992, Pages 156-157

  Yoshida, Isao ^a   Katsueda, Mineo ^a   Ohtaka, Shigeo ^a   Maruyama, Yasuo ^a   Okabe, Takeaki ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CELLULAR TELEPHONES; CUTOFF FREQUENCY; POWER AMPLIFIERS;

DIGITAL CELLULAR; DRAIN CONTACTS; HIGH POWER AMPLIFIER; ON-STATE RESISTANCE; POWER SUPPLY VOLTAGE; POWER-ADDED EFFICIENCY; SELF-ALIGNED; SUBMICROMETER CHANNELS;

POWER MOSFET;

EID: 84956260575     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.1992.991253     Document Type: Conference Paper

References (2)

1. H. Itoh, T. Okabe and M. Nagata, IEDM Tech. Digest, p. 95, 1983.
2. O. Ishikawa, H. Yamada and H. Esaki, IEDM Tech. Digest, p. 166, 1985.