Microstructural and electrical investigation of Ni/Au ohmic contact on p-type GaN

Journal of Electronic Materials

Volumn 30, Issue 2, 2001, Pages

  Kim, Jong Kyu ^a   Je, Jung Ho ^a   Lee, Jae Won ^b   Park, Yong Jo ^b   Kim, Taeil ^b   Jung, In Ok ^c   Lee, Byung Teak ^c   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Chonnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; DISSOLUTION; ELECTRIC CONDUCTIVITY OF SOLIDS; GALLIUM NITRIDE; GOLD; HOLE TRAPS; NICKEL; POINT DEFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SOLID SOLUTIONS; TRANSMISSION ELECTRON MICROSCOPY;

VACANCIES;

OHMIC CONTACTS;

EID: 0035251542     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0110-3     Document Type: Article

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