Characterization of hot-hole injection induced SILC and related disturbs in flash memories

IEEE Transactions on Electron Devices

Volumn 48, Issue 2, 2001, Pages 300-306

  Yih, C M ^a   Ho, Z H ^a   Chung, S S ^b   Liang, M S ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DATA STORAGE EQUIPMENT; ELECTRON TUNNELING; INDUCED CURRENTS; LEAKAGE CURRENTS; LOGIC GATES;

STRESS INDUCED LEAKAGE CURRENTS;

FLASH MEMORY;

EID: 0035250373     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.902731     Document Type: Article

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