New oxide damage characterization technique for evaluating hot carrier reliability of flash memory cell after P/E cycles

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1997, Pages 111-112

  Chung, Steve S ^a   Yih, C M ^a   Cheng, S M ^a   Liang, M S ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; HOT CARRIERS; MOS DEVICES; OXIDATION; SEMICONDUCTOR STORAGE;

FLASH MEMORY CELLS; OXIDE DAMAGE CHARACTERIZATION METHOD;

SEMICONDUCTOR DEVICE TESTING;

EID: 0030655380     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)