Degradations Due to Hole Trapping in Flash Memory Cells

IEEE Electron Device Letters

Volumn 10, Issue 3, 1989, Pages 117-119

  Haddad, Sameer ^a   Chang, Chi ^a   Swaminathan, Balaji ^a   Lien, Jih ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL; ELECTRONS--TUNNELING; OXIDES; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

FLASH MEMORY CELLS; FOWLER-NORDHEIM TUNNELING; GATE DISTURB; HOLE TRAPPING; HOT ELECTRON PROGRAMMABILITY DEGRADATION;

DATA STORAGE, SEMICONDUCTOR;

EID: 0024627110     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.31687     Document Type: Article

References (9)

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9. I. C. Chen, S. Holland, and C. Hu, “Hole trapping and breakdown in thin SiO2,” IEEE Electron Device Lett., vol. EDL-7, no. 3, pp. 164-166, 1986.