Electron traps and excess current induced by hot-hole injection into thin SiO2 films

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1995, Pages 168-176

  Kobayashi, Kiyoteru ^a   Teramoto, Akinobu ^a   Hirayama, Makoto ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC FILMS; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); HOT CARRIERS; SILICA; SUBSTRATES; THIN FILMS;

CARRIER INJECTION; ELECTRON CAPTURE; ELECTRON TRAPPING; EXCESS CURRENT;

MOSFET DEVICES;

EID: 0029213953     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/irps.1995.363352     Document Type: Conference Paper

References (27)