FLASH-ERASE EEPROM CELL WITH AN ASYMMETRIC SOURCE AND DRAIN STRUCTURE.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1987, Pages 560-563

  Kume, H ^a   Yamamoto, H ^a   Adachi, T ^a   Hagiwara, T ^a   Komori, K ^a   Nishimoto, T ^a   Koike, A ^a   Meguro, S ^a   Hayashida, T ^a   Tsukada, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL - FIXED; ELECTRONS - TUNNELING;

FAST PROGRAM/ERASE OPERATION; FLASH-ERASE EEPROM CELL; FOWLER-NORDHEIM TUNNELING; OVER-ERASING PROBLEM; SINGLE FLOATING GATE TRANSISTOR;

DATA STORAGE, SEMICONDUCTOR;

EID: 0023593246     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)