A direct and accurate method for the extraction of diffusion length and surface recombination velocity from an EBIC line scan

Solid State Electronics

Volumn 37, Issue 1, 1994, Pages 1-7

  Ong, V K S ^a   Phang, J C H ^a   Chan, D S H ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; ELECTRIC FIELDS; ELECTRON BEAMS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR JUNCTIONS; THREE DIMENSIONAL;

DIFFUSION LENGTH; EBIC LINE SCAN; MINORITY CARRIER; SCHOTTKY BARRIER; SURFACE RECOMBINATION VELOCITY;

CHARGE CARRIERS;

EID: 0028320057     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)90096-5     Document Type: Article

References (22)

1. Enhancement of Reverse Current in Semiconductor Diodes by Electron Bombardment
2. Electron and hole mobilities in silicon as a function of concentration and temperature
3. Quantification of the effects of generation volume, surface recombination velocity, and diffusion length on the electron-beam-induced current and its derivative: Determination of diffusion lengths in the low micron and submicron ranges