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Volumn 65, Issue 2, 1981, Pages 649-658

An analytical model of SEM and STEM charge collection images of dislocations in thin semiconductor layers: I. Minority carrier generation, diffusion, and collection

(1)  Donolato, C a  

a CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS;

EID: 0019573105     PISSN: 00318965     EISSN: 1521396X     Source Type: Journal    
DOI: 10.1002/pssa.2210650231     Document Type: Article
Times cited : (122)

References (34)
  • 2
    • 84987144292 scopus 로고
    • B. Ralph, P. E. Echlin H. J. G. Gundersen, and D. C. Joy (Ed.), The Microscopy of Semiconducting Materials, Proc. RMS Conf., Oxford
    • (1979)
  • 3
    • 84987112252 scopus 로고
    • J. Microscopy,. Parts 1 and 3
    • (1980) , pp. 118
  • 22
    • 84987086961 scopus 로고
    • Proc. VIII. Internat. Conf. Electron and Ion Beam Science and Technology, Electrochem. Soc., Princeton (N.J.)
    • (1978) , pp. 371
    • Parikh, M.1    Kyser, D.F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.