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Volumn 42, Issue 5, 1995, Pages 963-968

A Direct Method for the Extraction of Diffusion Length and Surface Recombination Velocity from an EBIC Line Scan: Planar Junction Configuration

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; ELECTRIC CURRENTS; INTEGRATED CIRCUITS; LINEARIZATION; NUMERICAL METHODS; REGRESSION ANALYSIS; THREE DIMENSIONAL;

EID: 0029306015     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.381995     Document Type: Article
Times cited : (58)

References (31)
  • 1
    • 0002887012 scopus 로고
    • The conductive mode
    • D. B. Holt and D. C. Joy, Eds., Academic Press
    • D. B. Holt, “The conductive mode,” in SEM Microcharacterization of Semiconductors. D. B. Holt and D. C. Joy, Eds. Academic Press, pp. 241–338, 1989.
    • (1989) SEM Microcharacterization of Semiconductors , pp. 241-338
    • Holt, D.B.1
  • 2
    • 21544482401 scopus 로고
    • Charge collection scanning electron microscopy
    • H. J. Leamy, “Charge collection scanning electron microscopy,” J. Appl. Phys.  vol. 53, no. 6, pp. R51-R80, 1982.
    • (1982) J. Appl. Phys , vol.53 , Issue.6 , pp. R51-R80
    • Leamy, H.J.1
  • 3
    • 0028320057 scopus 로고
    • A direct and accurate method for the extraction of diffusion length and surface recombination velocity from an EBIC line scan
    • Jan.
    • V. K. S. Ong, J. C. H. Phang, and D. S. H. Chan, “A direct and accurate method for the extraction of diffusion length and surface recombination velocity from an EBIC line scan,” Solid-State Electron., vol. 37, no. 1, pp. 1–7, Jan. 1994.
    • (1994) Solid-State Electron. , vol.37 , Issue.1 , pp. 1-7
    • Ong, V.K.S.1    Phang, J.C.H.2    Chan, D.S.H.3
  • 4
    • 0018504583 scopus 로고
    • Diffusion length evaluation of boron-implanted silicon using the SEM-EBIC/Schottky diode tech-nique
    • D. E. loannou and S. M. Davidson, “Diffusion length evaluation of boron-implanted silicon using the SEM-EBIC/Schottky diode tech-nique,” J. Phys. D : Appl. Phys., vol. 12, pp. 1339–1344, 1979.
    • (1979) J. Phys. D: Appl. Phys. , vol.12 , pp. 1339-1344
    • loannou, D.E.1    Davidson, S.M.2
  • 5
    • 0019009424 scopus 로고
    • A SEM-EBIC minority carrier lifetime measurement technique
    • D. E. Ioannou, “A SEM-EBIC minority carrier lifetime measurement technique,” J. Phvs. D : Appl. Phys., vol. 13, pp. 611–616, 1980.
    • (1980) J. Phvs. D: Appl. Phys. , vol.13 , pp. 611-616
    • Ioannou, D.E.1
  • 6
    • 84981425591 scopus 로고
    • SEM-EBIC studies of boron implanted silicon
    • D. E. Ioannou and S. M. Davidson, “SEM-EBIC studies of boron implanted silicon,” J. Micros., vol. 118, no. 3, pp. 337–342, 1980.
    • (1980) J. Micros. , vol.118 , Issue.3 , pp. 337-342
    • Ioannou, D.E.1    Davidson, S.M.2
  • 7
    • 84981411551 scopus 로고
    • Advances in the electric assessment of semiconductors using the scanning electron microscope
    • S. M. Davidson and C. A. Dimitriadis, “Advances i n the electric assessment of semiconductors using the scanning electron microscope,” J. Micros., vol. 118, no. 3, pp. 275–290, 1980.
    • (1980) J. Micros. , vol.118 , Issue.3 , pp. 275-290
    • Davidson, S.M.1    Dimitriadis, C.A.2
  • 8
    • 0019678655 scopus 로고
    • Determination of bulk diffusion length in thin semiconductor layers by SEM-EBIC
    • C. A. Dimitriadis, “Determination of bulk diffusion length in thin semiconductor layers by SEM-EBIC,” J. Phys. D: Appl. Phys., vol. 14, pp. 2269–2274, 1981.
    • (1981) J. Phys. D: Appl. Phys. , vol.14 , pp. 2269-2274
    • Dimitriadis, C.A.1
  • 9
    • 0020100669 scopus 로고
    • A SEM-EBIC minority carrier diffusion length measurement technique
    • D. E. Ioannou and C. A. Dimitriadis, “A SEM-EBIC minority carrier diffusion length measurement technique,” IEEE Trans. Electron Devices, vol. 29, no. 3, pp. 445–450, 1982.
    • (1982) IEEE Trans. Electron Devices , vol.29 , Issue.3 , pp. 445-450
    • Ioannou, D.E.1    Dimitriadis, C.A.2
  • 10
    • 0021230975 scopus 로고
    • A method of analyzing the induced current profiles obtained on a Schottky diode at normal irradiation
    • o. 1
    • C. Donolato, “A method of analyzing the induced current profiles obtained on a Schottky diode at normal irradiation,” IEEE Trans. Electron Devices, vol. 31, o. 1, pp. 121–123, 1984.
    • (1984) IEEE Trans. Electron Devices , vol.31 , pp. 121-123
    • Donolato, C.1
  • 11
    • 0021626522 scopus 로고
    • A diffusion problem in semiconductor technology
    • J. Boersma, J. J. E. Indenkleef, and H. K. Kuiken, “A diffusion problem in semiconductor technology,” J. Eng. Math., vol. 18, pp. 315–333, 1984.
    • (1984) J. Eng. Math. , vol.18 , pp. 315-333
    • Boersma, J.1    Indenkleef, J.J.E.2    Kuiken, H.K.3
  • 12
    • 33748841392 scopus 로고
    • Evaluation of diffusion length and surface recombination velocity from a planar collector geometry electron beam induced current scan
    • H. K. Kuiken and C. V. Opdorp, “Evaluation of diffusion length and surface recombination velocity from a planar collector geometry electron beam induced current scan,” J. Appl. Phys., vol. 57, no. 6, pp. 2077–2090, 1985.
    • (1985) J. Appl. Phys. , vol.57 , Issue.6 , pp. 2077-2090
    • Kuiken, H.K.1    Opdorp, C.V.2
  • 13
    • 0022161537 scopus 로고
    • Charge collection in a Schottky diode as a mixed boundary value problem
    • C. Donolato, “Charge collection in a Schottky diode as a mixed boundary value problem,” Solid-State Electron., vol. 28, no. 11, pp. 1143-1151, 1985.
    • (1985) Solid-State Electron. , vol.28 , Issue.11 , pp. 1143-1151
    • Donolato, C.1
  • 14
    • 0023569617 scopus 로고
    • Effect of reduction of PLZT on carrier lifetime determined by EBIC
    • J. C. Maurya, A. V. Dixit, V. Manorama, and S. V. Bhoraskar, “Effect of reduction of PLZT on carrier lifetime determined by EBIC,” Solid-State Comms., vol. 64, no. 9, pp. 1235–1240, 1987.
    • (1987) Solid-State Comms. , vol.64 , Issue.9 , pp. 1235-1240
    • Maurya, J.C.1    Dixit, A.V.2    Manorama, V.3    Bhoraskar, S.V.4
  • 16
    • 6144246602 scopus 로고
    • SEM EBIC identification of dark spots in n-type cadmium telluride
    • B. Sieber and J. L., Farvacque, “SEM EBIC identification of dark spots in n-type cadmium telluride,” Inst. Phys. Conf Ser., no. 87, pp. 739–744, 1987.
    • (1987) Inst. Phys. Conf Ser., no , Issue.87 , pp. 739-744
    • Sieber, B.1    Farvacque, J.L.2
  • 17
    • 0000165458 scopus 로고
    • WSe2: Optical and electrical properties as related to surface passivation of recombination centers
    • A. Jakubowicz, R. Tenne, M. Wolf, A. Wold, and D. Mahalu, “WSe2: Optical and electrical properties as related to surface passivation of recombination centers,” Phys. Rev. B, vol. 40, no. 5, pp. 2992–3000, 1989.
    • (1989) Phys. Rev. B , vol.40 , Issue.5 , pp. 2992-3000
    • Jakubowicz, A.1    Tenne, R.2    Wolf, M.3    Wold, A.4    Mahalu, D.5
  • 18
    • 5644256964 scopus 로고
    • Cathodoluminescence mapping, deep level transient spectroscopy, and electron beam induced current measurements on GaAs layers grown on Si substrates by metalorganic chemical vapor-deposition
    • A. C. Papadopoulo, R. Legros, J. F. Bresse, R. Azoulay, Y. Gao, and N. Draidia, “Cathodoluminescence mapping, deep level transient spectroscopy, and electron beam induced current measurements on GaAs layers grown on Si substrates by metalorganic chemical vapor-deposition,” J. Appl. Phys., vol. 66, no. 8, pp. 3831–3838, 1 989.
    • (1989) J. Appl. Phys. , vol.66 , Issue.8 , pp. 3831-3838
    • Papadopoulo, A.C.1    Legros, R.2    Bresse, J.F.3    Azoulay, R.4    Gao, Y.5    Draidia, N.6
  • 19
    • 0024771495 scopus 로고
    • Growth and characterization of polycrystalline silicon ingots doped with Cu, C, B or Al by directional solidification for photovoltaic application
    • R. Kishore, J. L. Pastol, and G. Revel, “Growth and characterization of polycrystalline silicon ingots doped with Cu, C, B or Al by directional solidification for photovoltaic application,” Solar Energy Matls., vol. 19, n os. 3–5, pp. 221–236, 1989.
    • (1989) Solar Energy Matls. , vol.19 , Issue.3–5 , pp. 221-236
    • Kishore, R.1    Pastol, J.L.2    Revel, G.3
  • 21
    • 0041154760 scopus 로고
    • Effect of conventional and rapid thermal annealing on platinum silicide Schottky barrier diodes
    • C. A. Dimitriadis, “Effect of conventional and rapid thermal annealing on platinum silicide Schottky barrier diodes,” Appl. Phys. Lett., vol. 56, no. 2, pp. 143–145, 1990.
    • (1990) Appl. Phys. Lett. , vol.56 , Issue.2 , pp. 143-145
    • Dimitriadis, C.A.1
  • 22
    • 0026413589 scopus 로고
    • Evaluation of the diffusion length of minority carriers in bulk GaAs
    • A. Castaldini, A. Cavallini, E. Gombia, R. Mosca, and L. Tarricone, “Evaluation of the diffusion length of minority carriers in bulk GaAs,” Appl. Surf. Sci., vol. 50, pp. 485–489, 1991.
    • (1991) Appl. Surf. Sci. , vol.50 , pp. 485-489
    • Castaldini, A.1    Cavallini, A.2    Gombia, E.3    Mosca, R.4    Tarricone, L.5
  • 23
    • 0026360302 scopus 로고
    • EBIC diffusion length evaluation by the moment method
    • sect. 10
    • D. Cavalcoli, A. Cavallini, and A. Castaldini, “EBIC diffusion length evaluation by the moment method,” Inst. Phys. Conf. Ser., no. 117, sect. 10, pp. 723–726, 1991.
    • (1991) Inst. Phys. Conf. Ser., no , Issue.117 , pp. 723-726
    • Cavalcoli, D.1    Cavallini, A.2    Castaldini, A.3
  • 24
    • 0004832301 scopus 로고
    • Determination of minority carrier diffusion length by integral properties of electron beam inducedprofiles current
    • D. Cavalcoli, “Determination of minority carrier diffusion length by integral properties of electron beam induced current profiles,” J. Appl. Phys., vol. 70, no. 4, pp. 2163–2168, 1991.
    • (1991) J. Appl. Phys. , vol.70 , Issue.4 , pp. 2163-2168
    • Cavalcoli, D.1    Cavallini, A.2    Castaldini, A.3
  • 25
    • 0021424902 scopus 로고
    • Peripheral electron beam induced current response of a shallow p-n junction
    • H. Holloway, “Peripheral electron beam induced current response of a shallow p-n junction,” J. Appl. Phys., vol. 55, no. 10, pp. 3669–3675, 1984.
    • (1984) J. Appl. Phys. , vol.55 , Issue.10 , pp. 3669-3675
    • Holloway, H.1
  • 26
    • 0010655016 scopus 로고
    • Electron beam induced current determination of minority carrier diffusion length and surface recombination velocity in mercury cadmium telluride
    • B. E. Artz, “Electron beam induced current determination of minority carrier diffusion length and surface recombination velocity in mercury cadmium telluride,” J. Appl. Phys., vol. 57, no. 8, pp. 2886-2891, 1985.
    • (1985) J. Appl. Phys. , vol.57 , Issue.8 , pp. 2886-2891
    • Artz, B.E.1
  • 27
    • 33947104820 scopus 로고
    • Electron beam induced currents collected by a p-n junction of finite junction depth
    • R. J. Soukup and J. P. Ekstrand, “Electron beam induced currents collected by a p-n junction of finite junction depth,” J. Appl. Phys., vol. 57, no. 12, pp. 5386–5395, 1985.
    • (1985) J. Appl. Phys. , vol.57 , Issue.12 , pp. 5386-5395
    • Soukup, R.J.1    Ekstrand, J.P.2
  • 28
    • 0016961310 scopus 로고
    • Theory of life time measurements with the scanning electron microscope: Steady state
    • F. Berz and H. K. Kuiken, “Theory of life time measurements with the scanning electron microscope: Steady state,” Solid State Electronics, vol. 19, pp. 437–445, 1976.
    • (1976) Solid State Electronics , vol.19 , pp. 437-445
    • Berz, F.1    Kuiken, H.K.2
  • 30
    • 36549098117 scopus 로고
    • Quantification of the effects of generation volume, surface recombination velocity, and diffusion length on the electron-beam-induced current and its derivative: Determination of diffusion lengths in the low-micron and submicron ranges
    • K. L. Luke, O. von Roos, and L. J. Cheng, “Quantification of the effects of generation volume, surface recombination velocity, and diffusion length on the electron-beam-induced current and its derivative: Determination of diffusion lengths in the low-micron and submicron ranges,” J. Appl. Phys., vol. 57, no. 6, pp. 1978–1984, 1985.
    • (1985) J. Appl. Phys. , vol.57 , Issue.6 , pp. 1978-1984
    • Luke, K.L.1    von Roos, O.2    Cheng, L.J.3


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