Scanning Capacitance Microscopy for Two-Dimensional Doping Profiling in Si- and InP-Based Device Structures

Physica Scripta T

Volumn 79, Issue , 1999, Pages 163-166

  Bowallius, O ^a   Ankarcrona, J ^a   Hammar, M ^a   Anand, S ^a   Nilsson, S ^a   Landgren, G ^a   Radamson, H ^a   Tilly, L ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ERICSSON RADIO SYSTEMS AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041550923     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)

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6. Kleiman, R. N. et al., IEDM technical digest (Cat. No. 97CH36103) IEEE (1997).
7. Edwards, H. et al., Appl. Phys. Lett. 72, 698 (1998).
8. Sze, S. M., "Physics of Semiconductor Devices" (Wiley, New York, 1981), p. 391.