Fabrication of NIST-format x-ray masks with 4-Gbit DRAM test patterns

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4409, Issue 1, 2001, Pages 660-668

  Tanaka, Y ^a   Fujii, K ^a   Suzuki, K ^a   Iwamoto, T ^b   Tsuboi, S ^b   Matsui, Y ^b  

^a NEC CORPORATION   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Critical dimension (CD); CrN; Distortion; Dynamic random access memory (DRAM); Electron beam (EB); Image placement (IP); SiC; TaBN; X ray lithography; X ray mask

Indexed keywords

CHROMIUM COMPOUNDS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRON BEAMS; OPACITY; SILICON CARBIDE; TANTALUM COMPOUNDS; X RAY LITHOGRAPHY;

CRITICAL DIMENSION CONTROL; IMAGE PLACEMENT; X-RAY MASK;

MASKS;

EID: 0035184737     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.438365     Document Type: Article

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