SCOPUS 정보 검색 플랫폼

Volumn 39, Issue 12 B, 2000, Pages 6952-6956

Sub-100-nm device fabrication using proximity X-Ray lithography at five levels

Author keywords

MOSFET; Threshold voltage; X ray lithography; X ray mask

Indexed keywords

GATES (TRANSISTOR); MASKS; MOSFET DEVICES; PHOTORESISTS; SEMICONDUCTOR DEVICE MANUFACTURE; THRESHOLD VOLTAGE;

PROXIMITY X RAY LITHOGRAPHY (PXL);

X RAY LITHOGRAPHY;

EID: 0034431228 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.6952 Document Type: Article

Times cited : (7)

References (10)

1
- 0033269293
- Y. Tanaka, T. Iwamoto, K. Fujii, Y. Kikuchi, Y. Matsui, M. Fukuda and H. Morita: J. Vac. Sci. & Technol. B17 (1999) 3415.
- (1999) J. Vac. Sci. & Technol. , vol.B17 , pp. 3415
- Tanaka, Y.¹ Iwamoto, T.² Fujii, K.³ Kikuchi, Y.⁴ Matsui, Y.⁵ Fukuda, M.⁶ Morita, H.⁷

2
- 0000344827
- R. Viswanathan, D. Seeger, A. Bright, T. Bucelot, K. Petrillo, P. Blauner, P. Agnello, J. Warlaumont, J. Conway and D. Patel: J. Vac. Sci. & Technol. B11 (1993) 2910.
- (1993) J. Vac. Sci. & Technol. , vol.B11 , pp. 2910
- Viswanathan, R.¹ Seeger, D.² Bright, A.³ Bucelot, T.⁴ Petrillo, K.⁵ Blauner, P.⁶ Agnello, P.⁷ Warlaumont, J.⁸ Conway, J.⁹ Patel, D.¹⁰

3
- 0009510094
- I. Y. Yang, H. Hu, L. T. Su, V. V. Wong, M. Burkhardt, E. E. Moon, J. M. Carter, D. A. Antoniadis, H. I. Smith, K. W. Rhee and W. Chu: J. Vac. Sci. & Technol B12 (1994) 4051.
- (1994) J. Vac. Sci. & Technol , vol.B12 , pp. 4051
- Yang, I.Y.¹ Hu, H.² Su, L.T.³ Wong, V.V.⁴ Burkhardt, M.⁵ Moon, E.E.⁶ Carter, J.M.⁷ Antoniadis, D.A.⁸ Smith, H.I.⁹ Rhee, K.W.¹⁰ Chu, W.¹¹

4
- 0029404838
- S. J. Wind, Y. Taur, Y. H. Lee, Y. Mii, R. G. Viswanathan, J, J. Buchignao, A. T. Pomerene, R. M. Sicina, K. R. Mikkhove, J. W. Stiebbritz, R. A. Roy, C. Hu, M. P. Manny, S. Cohen and W. Chen: J. Vac. Sci. & Technol B13 (1995) 2688.
- (1995) J. Vac. Sci. & Technol , vol.B13 , pp. 2688
- Wind, S.J.¹ Taur, Y.² Lee, Y.H.³ Mii, Y.⁴ Viswanathan, R.G.⁵ Buchignao, J.J.⁶ Pomerene, A.T.⁷ Sicina, R.M.⁸ Mikkhove, K.R.⁹ Stiebbritz, J.W.¹⁰ Roy, R.A.¹¹ Hu, C.¹² Manny, M.P.¹³ Cohen, S.¹⁴ Chen, W.¹⁵

5
- 0010358876
- I. Y. Yang, D. A. Antoniadis and H. I. Smith: J. Vac. Sci. & Technol. B14 (1996) 4024.
- (1996) J. Vac. Sci. & Technol. , vol.B14 , pp. 4024
- Yang, I.Y.¹ Antoniadis, D.A.² Smith, H.I.³

6
- 12844267105
- H. Tsuyuzaki, M. Fukuda, M. Suzuki, T. Kaneko, N. Takeuchi and M. Kanai: Microelectron. Eng. 41/42 (1998) 263.
- (1998) Microelectron. Eng. , vol.41-42 , pp. 263
- Tsuyuzaki, H.¹ Fukuda, M.² Suzuki, M.³ Kaneko, T.⁴ Takeuchi, N.⁵ Kanai, M.⁶

7
- 0033308387
- M. Simada, T. Tsuchizawa, S. Uchiyama, T. Ohkubo, S. Itabashi, I. Okada, T. Ono and M. Oda: Jpn. J. Appl. Phys. 38 (1999) 7071.
- (1999) Jpn. J. Appl. Phys. , vol.38 , pp. 7071
- Simada, M.¹ Tsuchizawa, T.² Uchiyama, S.³ Ohkubo, T.⁴ Itabashi, S.⁵ Okada, I.⁶ Ono, T.⁷ Oda, M.⁸

8
- 0032651669
- J. Nakamura, Y. Kawai, K. Deguchi, M. Oda and T. Matsuda: Proc. SPIE 3678 (1999) 455.
- (1999) Proc. SPIE , vol.3678 , pp. 455
- Nakamura, J.¹ Kawai, Y.² Deguchi, K.³ Oda, M.⁴ Matsuda, T.⁵

9
- 0033271272
- H. Aoyama, S. Mitsui, T. Taguchi, Y. Tanaka, Y. Matsui, M. Fukuda, M. Suzuki, T. Haga and H. Morita: J. Vac. Sci. & Technol. B17 (1999) 3411.
- (1999) J. Vac. Sci. & Technol. , vol.B17 , pp. 3411
- Aoyama, H.¹ Mitsui, S.² Taguchi, T.³ Tanaka, Y.⁴ Matsui, Y.⁵ Fukuda, M.⁶ Suzuki, M.⁷ Haga, T.⁸ Morita, H.⁹

10
- 0033890734
- C. H. Ling, C. H. Ang and D. S. Ang: IEEE Trans. Electron. Devices 47 (2000) 650.
- (2000) IEEE Trans. Electron. Devices , vol.47 , pp. 650
- Ling, C.H.¹ Ang, C.H.² Ang, D.S.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.