Device susceptibility update: 1999-2000

IEEE Radiation Effects Data Workshop

Volumn , Issue , 2001, Pages 106-126

  Coss, J R ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; DIGITAL DEVICES; HEAVY IONS; MOSFET DEVICES; NEUTRONS; PROTONS; SPACECRAFT EQUIPMENT;

DEVICE SUSCEPTIBILITY;

ELECTRONIC EQUIPMENT TESTING;

EID: 0035171306     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (22)

1. Trends in parts susceptibility to SEU from heavy ions
2. Recent trends in parts susceptibility from heavy ions
3. Latest trends in parts SEP susceptibility from heavy ions
4. Update on parts SEE susceptibility from heavy ions
5. Overview of device susceptibility from heavy ions
6. Trends in device susceptibility from heavy ions
7. Device SEE susceptibility from heavy ions (1995-1996)
8. Device SEE susceptibility update: 1996-1998
9. Single event effects and radiation damage results for candidate spacecraft electronics
10. Radiation characterization of 3.3 volt, 16 M-bit DRAMs for solid state mass memory space applications
11. Recent radiation damage and single event effect results for microelectronics
12. Radiation damage and single event effect results for candidate spacecraft electronics
13. Observations of single event failure in power MOSFETs
14. Update of single event failure in power MOSFETs
15. Compendium of single event failure in power MOSFETs