Update on parts see susceptibility from heavy ions

IEEE Transactions on Nuclear Science

Volumn 38, Issue 6, 1991, Pages 1529-1539

  Koga, R ^b   Crain, W R ^b   Crawford, K B ^b   Hansel, S J ^b   Lau, D D ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, CMOS; IONS; TRANSISTORS, BIPOLAR;

HEAVY IONS; SINGLE EVENT EFFECTS;

SEMICONDUCTOR DEVICES, MOS;

EID: 0026407427     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.124142     Document Type: Article

References (6)

1. D. K. Nichols, W. E. Price, W. A. Kolasinski, R. Koga, J. C. Pickel, J. T. Blandford, and A. E. Waskiewicz, “Trends in Parts Susceptibility to Single Event Upset from Heavy Ions,” IEEE Trans. on Nuc. Sci, NS-32, No. 6, p. 4189 (Dec. 1985).
2. D. K. Nichols, L. S. Smith, W. E. Price, R. Koga, and W. A. Kolasinski, “Recent Trends in Parts SEU Susceptibility from Heavy Ions,” IEEE Trans on Nuc. Sci., NS-34, No. 6, p. 1332 (Dec. 1987).
3. D. K. Nichols, L. S. (Ted) Smith, George A. Soli, R. Koga, W. A. Kolasinski, “Latest Trends in Parts SEP Susceptibility from Heavy Ions,” IEEE Trans. on Nuc. Sci., NS-36, No. 6, p. 2388 (Dec. 1989).
4. R. Koga, W. A. Kolasinski, J. V. Osborn, J. H. Elder, and R. Chitty, “SEU Test Techniques for 256K Static RAMs and Comparisons of Upsets Induced by Heavy Ions and Protons,” IEEE Trans. on Nuc. Sci., NS-35, No. 6, p. 1638 (Dec. 1988).
5. D. K. Nichols, J. R. Coss, L. S. Smith, B. Rax, M. Huebner, and K. Watson, “Full Temperature Single Event Upset Characterization of Two Microprocessor Technologies,” IEEE Trans. on Nuc. Sci., p. 1619 (Dec. 1988).
6. ASTM Designation: F 1192–90, “Standard Guide for the Measurement of SEP Induced by Heavy Ion Irradiation of Semiconductor Devices,” ASTM, 1919 Race St., Philadelphia, Pa. 19103.