Modelling two SiGe HBT specific features for circuit simulation

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2001, Pages 38-41

  Paasschens, J C J ^a   Kloosterman, W J ^a   Havens, R J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CHARGE; ENERGY GAP; SILICON COMPOUNDS;

BANDGAP;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035163999     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)