Modeling of output resistance in sige heterojunction bipolar transistors with significant neutral base recombination

IEEE Transactions on Electron Devices

Volumn 44, Issue 5, 1997, Pages 693-699

  Hamel, John S ^a   Alison, Rodney J ^b   Blaikie, Richard J ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b UNIVERSITY OF CANTERBURY   (New Zealand)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; HETEROJUNCTIONS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SIMULATION;

OUTPUT RESISTANCE;

BIPOLAR TRANSISTORS;

EID: 0031147075     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.568028     Document Type: Article

References (13)

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