The influence of Ge grading on the bias and temperature characteristics of SiGe HBT's for precision analog circuits

IEEE Transactions on Electron Devices

Volumn 47, Issue 2, 2000, Pages 292-298

  Salmon, Stacey L ^a   Cressler, John D ^b   Jaeger, Richard C ^a   Harame, David L ^c  

^a AUBURN UNIVERSITY   (United States)

^b MAXIM INTEGRATED PRODUCTS   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; COMPUTER SIMULATION; COMPUTER SOFTWARE; ENERGY GAP; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

BANDGAP REFERENCE (BGR) CIRCUITS; SILICON GERMANIDE; SOFTWARE PACKAGE SPICE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033900447     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.822270     Document Type: Article

References (16)

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