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Volumn , Issue , 1999, Pages 58-61
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Impact ionization and neutral base recombination in SiGe HBT's
a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
CHEMICAL VAPOR DEPOSITION;
COMPUTER SIMULATION;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC BREAKDOWN;
ELECTRIC CURRENT MEASUREMENT;
EPITAXIAL GROWTH;
IMPACT IONIZATION;
LEAKAGE CURRENTS;
SEMICONDUCTING SILICON COMPOUNDS;
TEMPERATURE MEASUREMENT;
CARRIER LIFETIMES;
GUMMEL PLOT;
KINK EFFECT;
NEUTRAL BASE RECOMBINATION;
SELECTIVE EPITAXIAL GROWTH;
SILICON GERMANIUM;
SOFTWARE PACKAGE MEDICI;
HETEROJUNCTION BIPOLAR TRANSISTORS;
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EID: 0033280810
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (8)
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References (9)
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