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Volumn , Issue , 1999, Pages 58-61

Impact ionization and neutral base recombination in SiGe HBT's

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC CURRENT MEASUREMENT; EPITAXIAL GROWTH; IMPACT IONIZATION; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; TEMPERATURE MEASUREMENT;

EID: 0033280810     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (8)

References (9)
  • Reference 정보가 존재하지 않습니다.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.