6.5 kV clustered insulated gate bipolar transistor in homogeneous base technology

Solid-State Electronics

Volumn 45, Issue 1, 2001, Pages 71-77

  Luther King, N ^a   Sweet, M ^a   Spulber, O ^a   Vershinin, K ^a   Ngw, C K ^a   Bose, S C ^a   De Souza, M M ^a   Sankara Narayanan, E M ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MOSFET DEVICES; SEMICONDUCTOR DOPING; SUBSTRATES; THYRISTORS;

CLUSTERED INSULATED GATE BIPOLAR TRANSISTORS (CIGBT); HOMOGENEOUS BASE TECHNOLOGIES;

BIPOLAR TRANSISTORS;

EID: 0035157150     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00240-9     Document Type: Article

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