Design considerations and characteristics of rugged punchthrough (PT) IGBTs with 4.5 kV blocking capability

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1996, Pages 327-330

  Bauer, F ^a   Dettmer, H ^a   Fichtner, W ^a   Lendenmann, H ^a   Stockmeier, T ^a   Thiemann, U ^a  

^a ABB Semiconductors Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LOSSES; GATES (TRANSISTOR); POWER ELECTRONICS; PRODUCT DESIGN; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SWITCHES; SUBSTRATES;

BLOCKING CAPABILITY; INSULATED GATE BIPOLAR TRANSISTORS; POWER SEMICONDUCTOR SWITCHES; RUGGED PUNCHTHROUGH;

BIPOLAR TRANSISTORS;

EID: 0029700087     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)