Punch-through IGBTs with homogeneous N-base operating at 4 kV line voltage

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1995, Pages 492-496

  Dettmer, Hartmut ^a   Fichtner, Wolfgang ^a   Bauer, Friedhelm ^a   Stockmeier, Thomas ^a  

^a SYNOPSYS SWITZERLAND LLC   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CURRENT DENSITY; DIFFUSION IN SOLIDS; ELECTRIC LOSSES; EPITAXIAL GROWTH; GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR MATERIALS; SWITCHING;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); PUNCH THROUGH STRUCTURE;

BIPOLAR TRANSISTORS;

EID: 0029203066     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (23)