Novel IGBT chip design concept of high turn-off current capability and high short circuit capability for 2.5kV power pack IGBT

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 1999, Pages 177-180

  Yoshikawa, Koh ^a   Koga, Takeharu ^a   Fujii, Takeshi ^a   Katoh, Tsutomu ^a   Takahashi, Yoshikazu ^a   Seki, Yasukazu ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; ELECTRIC POTENTIAL; SHORT CIRCUIT CURRENTS;

INSULATED GATE BIPOLAR TRANSISTORS; PEAK COLLECTOR VOLTAGE;

INTEGRATED CIRCUIT LAYOUT;

EID: 0032598927     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (10)