Dependence of photoluminescence from β-FeSi2 and induced deep levels in Si on the size of β-FeSi2 balls embedded in Si crystals

Thin Solid Films

Volumn 381, Issue 2, 2001, Pages 209-213

  Suemasu, T ^a   Fujii, T ^a   Takakura, K ^a   Hasegawa, F ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOEMISSION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; SPUTTER DEPOSITION;

REACTIVE DEPOSITION EPITAXY;

SEMICONDUCTING FILMS;

EID: 0035148141     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01745-4     Document Type: Article

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