A planar gate double beryllium implanted GaAs power MESFET for low voltage digital wireless communication application

IEEE Transactions on Electron Devices

Volumn 47, Issue 6, 2000, Pages 1134-1138

  Chang, E Y ^a,b   Fuh, Chwan Shyan ^a   Meng, Chin Chun ^a   Wang, K B ^a   Chen, S H ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

Be ion implantation; CDM; Dcs1800, low voltage; MESFET; Planar gate

Indexed keywords

ADJACENT CHANNEL POWER REJECTION; BERYLLIUM ION IMPLANTATION; PLANAR GATE TECHNOLOGY;

CODE DIVISION MULTIPLE ACCESS; ELECTRIC POTENTIAL; ELECTRIC POWER SUPPLIES TO APPARATUS; ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SUBSTRATES; WIRELESS TELECOMMUNICATION SYSTEMS;

MESFET DEVICES;

EID: 0033739455     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.842954     Document Type: Article

References (9)

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