High-power-density and high-efficiency atomic-planar-doped AlGaAs/InGaAs quantum-well power high-electron-mobility transistors for 2.4 V medium-power wireless communication applications

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1856-1861

  Lai, Yeong Lin ^a   Chang, Edward Y ^a   Chang, Chun Yen ^b   Liu, T H ^c   Wang, S P ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c Hexawave Inc   (Taiwan)

Author keywords

AlGaAs InGaAs; ISM band; L band; Low voltage; PHS; Power HEMT; Wireless communications

Indexed keywords

EID: 0001422260     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1856     Document Type: Article

References (23)

1. M. Yanagihara, Y. Ota, K. Nishii, O. Ishikawa and A. Tamura: Electron. Lett. 28 (1992) 686.
2. T. Quach and J. Staudinger: IEEE GaAs IC Symp. Tech. Dig. (1994) p. 179.
3. J. L. Lee, H. Kim, J. K. Mun, H. G. Lee and J. M. Park: IEEE Electron Device Lett. 15 (1994) 324.
4. S. Murai, T. Sawai, T. Yamaguchi, S. Matsushita and Y. Harada: IEEE GaAs IC Symp. Tech. Dig. (1992) p. 139.
5. T. Apel, E. Creviston, S. Ludvik, L. Quist and B. Tuch: IEEE Microwave & Millimeter-Wave Monolith. Circuits Symp. Tech. Dig. (1994) p. 15.
6. J. W. Lee, M. K. Gong, S. G. Cho and B. Kim: IEEE MTT-S Tech. Dig. (1995) p. 453.
7. N. Iwata, K. Inosako and M. Kuzuhara: IEEE MTT-S Tech. Dig. (1993) p. 1465.
8. E. Glass, J. Abrokwah, R. Lucero, E. Spears, J.-H. Huang, B. Bernhardt and B. Ooms: IEEE MTT-S Tech. Dig. (1996) p. 1083.
9. W. Baumberger: IEEE GaAs IC Symp. Tech. Dig. (1993) p. 29.
10. Y. Guo and K. Feher: IEEE Trans. Consumer Electron. 39 (1993) 100.
11. M. Nagaoka, K. Ishida, T. Matsunaga, K. Nishihori, T. Hashimoto, M. Yoshimura, Y. Tanabe, M. Mihara, Y. Kitaura and N. Uchitomi: Jpn. J. Appl. Phys. 33 (1994) 767.
12. J. Loraine: IEEE GaAs IC Symp. Tech. Dig. (1993) p. 11.
13. K. Y. Hur, R. A. McTaggart, B. W. LeBlanc, W. E. Hoke, P. J. Lemonias, A. B. Miller, T. E. Kazior and L. M. Aucoin: IEEE GaAs IC Symp. Tech. Dig. (1995) p. 101.
14. C. S. Wu, F. Ren, S. J. Pearton, M. Hu, C. K. Pao and R. F. Wang: IEEE Trans. Electron Devices 42 (1995) 1419.
15. K. Inosako, K. Matsunaga, Y. Okamoto and M. Kuzunara: IEEE Electron Device Lett. 7 (1994) 248.
16. Y.-L. Lai, E. Y. Chang, C.-Y. Chang, T. K. Chen, T. H. Liu, S. P. Wang, T. H. Chen and C. T. Lee: IEEE Electron Device Lett. 17 (1996) 229.
17. P. M. Smith, D. W. Ferguson, W. F. Kopp, P. C. Chao, W. Hu, P. Ho and J. M. Ballingall: IEEE MTT-S Tech. Dig. (1991) p. 717.
18. H. Ono, Y. Umemoto, H. Ichikawa, M. Mori, M. Kudo, O. Kagaya and Y. Imamura: Int. Electron. Device Meet. Tech. Dig. (1994) p. 899.
19. C. K. Pao, G. L. Lan, C. S. Wu, A. Igawa, M. Hu, J. C. Chen and Y. C. Shih: IEEE Microwave & Guided Wave Lett. 2 (1992) 394.
20. J. L. Lee, J. K. Mun, H. Kim, J. J. Lee and H. M. Park: IEEE Trans. Electron Devices 43 (1996) 519.
21. C. S. Wu, F. Ren, S. J. Pearton, M. Hu, C. K. Pao and R. F. Wang: Electron. Lett. 30 (1994) 1803.
22. P. M. Smith, D. W. Ferguson, W. F. Kopp, P. C. Chao, W. Hu, P. Ho and J. M. Ballingall: IEEE MTT-S Tech. Dig. (1991) p. 717.
23. W. P. Chou and P. J. McLane: IEEE Trans. Vehicular Tech. 45 (1996) 12.