Power PHEMT with compact device layout for low voltage CDMA application

Electronics Letters

Volumn 36, Issue 6, 2000, Pages 577-579

  Chang, E Y ^a   Lee, Di Houng ^a   Chen, S H ^a   Chang, H C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CODE DIVISION MULTIPLE ACCESS; CURRENT DENSITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE; WIRELESS TELECOMMUNICATION SYSTEMS;

LOW VOLTAGE CODE DIVISION MULTIPLE ACCESS; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033891796     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000360     Document Type: Article

References (5)

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2. LAI, YEONG-LIN, CHANG, EDWARD Y., CHANG, CHUN-YEN, LIU, T.H., WANG, S.P., and HSU, H.T.: '2-V-operation δ-doped power HEMT's for personal handy-phone system', IEEE Microw. Guid. Wave Lett., 1997, 7, (8), pp. 219-221
3. 0.8As power HEMT for low supply voltage wireless communications'. 55th Annual Device Research Conf. Dig., New York, 1997, pp. 70-71
4. MARTINEZ, M.J., SCHIRMANN, E., DURLAM, M., HUANG, J.H., TEHRANI, S., CODY, N., DRIVER, T., and BARKLEY, K.: 'AlGaAs/ InGaAs power P-HEMTs for high-efficiency, low-voltage portable applications'. IEEE MTT-S Int. Microw. Symp. Dig., 1996, pp. 551-553
5. IWATA, N., YAMAGUCHI, K., NISHIMURA, T.B., TAKEMURA, K., and MIYASAKA, Y.: '49% efficiency power amplifier MMIC utilizing SrTiO3 capacitors for 3.5V Li-ion battery operated CDMA cellular phones'. IEEE RFIC Symp. Tech. Dig., New York, 1998, pp. 65-68