Printing 0.13 μm contact holes using 193nm attenuated phase shifting masks

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4186, Issue , 2001, Pages 275-286

  Wang, C M ^a   Lin, S J ^a   Lin, C H ^a   Ku, Y C ^a   Yen, A ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Aerial images; Atomic force microscope; Attenuated phase shifting mask; Contact hole; Critical dimension; Depth of focus

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; DATA ACQUISITION; ETCHING; HOLE TRAPS; IMAGE ANALYSIS; PHOTOLITHOGRAPHY;

ARIEL IMAGE ACQUISITION; ATTENUATED PHASE SHIFTING MASKS; DEPTH OF FOCUS (DOF);

MASKS;

EID: 0035052138     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.410704     Document Type: Conference Paper

References (7)

1. The mask error factor in optical lithography
2. Development of ZrSiO attenuated phase shift mask for ArF excimer laser lithography
3. Attenuated phase shift mask materials for 248 and 193nm lithography
4. ZrSiO, a new and robust material for attenuated phase-shift masks in ArF lithography
5. Attenuated phase shift mask materials for 248- and 193nm lithography
6. Design of 200nm, 170nm, 140nm DUV contact sweeper high transmission attenuated phase shift mask: Experimental results part 2
7. The customized illumination aperture filter for low K1 photolithography process