Attenuated phase shift mask materiafs for 248 and 193 nm lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 6, 1996, Pages 3719-3723

  Smith, B W ^a   Butt, S ^a   Alam, Z ^a   Kurinec, S ^a   Lane, R L ^a  

^a Kate Gleason College of Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRIC PROPERTIES; LIGHT TRANSMISSION; MOLYBDENUM COMPOUNDS; OPTICAL FILMS; OPTICAL PROPERTIES; PHASE SHIFT; PHOTOLITHOGRAPHY; PLASMA ETCHING; REACTIVE ION ETCHING; SILICON NITRIDE; TANTALUM COMPOUNDS;

ALUMINUM NITRIDE; ATTENUATED PHASE SHIFT MASK FILMS; MOLYBDENUM SILICON OXIDE; OPTICAL CONSTANTS; TANTALUM SILICON OXIDE;

MASKS;

EID: 0030289165     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

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