Development of a next generation E-beam lithography system for 1Gb DRAM masks

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3412, Issue , 1998, Pages 33-44

  Nakagawa, Y ^a   Komagata, T ^a   Takemura, H ^a   Gotoh, N ^a   Tanaka, K ^a  

^a JEOL LTD   (Japan)

Author keywords

20 bit D to converter; Beam shot correction; CD linearity; Electron beam lithography; Exposure speed; Line width uniformity; Mask; Reticle; Space charge effect; Stitching error

Indexed keywords

CURRENT DENSITY; CURVE FITTING; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC SPACE CHARGE; ELECTRON BEAMS; ELECTROOPTICAL EFFECTS; ERRORS; LITHOGRAPHY; THRESHOLD VOLTAGE;

BEAM SHOT CORRECTION; CRITICAL DIMENSION LINEARITY; ELECTRON BEAM LITHOGRAPHY SYSTEM; EXPOSURE SPEED; HIGH RESOLUTION HIGH CURRENT DENSITY ELECTRON OPTICAL SYSTEM; LINEWIDTH UNIFORMITY; RETICLE; STITCHING ERROR;

MASKS;

EID: 0038335837     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.328826     Document Type: Conference Paper

References (2)

1. T. Komagata et al., "Development of Electron Beam Optical Column for Mask Lithography System", SPIE Vol.3096, pp.125-136, 1997.
2. T. Komagata, Y. Nakagawa, H. Takemura, N. Gotoh, and K. Tanaka, "Development of a Next Generation E-Beam Lithography System for 1Gb DRAM Masks", SPIE's 23rd Annual International Symposium on Micro-lithography, 22-27, Feb. 1998, Santa Clara, (to be published)