Heterostructure HgCdTe photovoltaic detectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4355, Issue , 2001, Pages 1-14

  Rogalski, A ^a  

^a MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Dual band detectors; Focal plane arrays; N p n HgCdTe photodiodes; Photodiode performance; Sequential and simultaneous operations

Indexed keywords

FABRICATION; HETEROJUNCTIONS; LATTICE CONSTANTS; MERCURY COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MULTILAYERS; PHOTODIODES; VAPOR PHASE EPITAXY;

PHOTOVOLTAIC DETECTORS;

INFRARED DETECTORS;

EID: 0034947368     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.417762     Document Type: Conference Paper

References (53)

1. Infrared photovoltaic detectors
2. Narrow gap semiconductor photodiodes
3. Infrared focal plane array technology
4. New generation of infrared photodetectors
5. Ultimate performance of infrared photodetectors and figure of merit of detector material
6. xTe detectors
7. +-on-p versus p-on-n structures
8. Near room-temperature IR photo-detectors
9. Infrared detectors
10. New generation of near-room-temperature photodetectors
11. Progress in infrared detector technology
12. Novel InTlSb alloy for uncooled long-wavelength infrared photodetectors
13. Exploration of InSbBi for uncooled long-wavelength infrared photodetectors
14. Key issues in HgCdTe-based focal plane arrays: A industry perspective
15. xTe grown by molecular beam epitaxy
16. P-on-n activated junction in LWIR HgCdTe/GaAs
17. Molecular-beam epitaxy growth and in situ arsenic doping of p-on-n HgCdTe heterojunctions
18. Growth and characterization of p-on-n HgCdTe liquid-phase epitaxy heterojunction material for 11-18 μm applications
19. Mercury cadmium telluride junctions grown by liquid phase epitaxy
20. The impact of characterization techniques on HgCdTe infrared detector technology
21. Infrared image sensors
22. An assessment of HgCdTe and GaAs/GaAIAs technologies for LWIR infrared imagers
23. Molecular beam epitaxy HgCdTe infrared photovoltaic detectors
24. Advances in 15 gm HgCdTe photovoltaic and photoconductive detector technology for remote sensing
25. Mercury cadmium telluride short- and medium-wavelength infrared staring focal plane arrays
26. High-performance 5-μm 640×480 HgCdTe-on-sapphire focal plane arrays
27. State of the art of rig-melt LPE HgCdTe at Santa Barbara Research Center
28. Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications
29. Status and direction of PACE-1 HgCdTe FPAs for astronomy
30. 2.5 μm PACE-1 HgCdTe 1024×1024 FPA for infrared astronomy
31. High performance SWIR HgCdTe detector arrays
32. Performance limitation of short wavelength infrared InGaAs and HgCdTe photodiodes
33. Performance of HgCdTe, InGaAs and quantum well GaAs/AlGaAs staring infrared focal plane arrays
34. Applications of near-infrared imaging
35. High performance uncooled InAsSbP/InGaAs photodiodes for the 1.8-3.4 μm wavelength range
36. Room temperature unpassivated InAs p-i-n photodetectors grown by molecular beam epitaxy
37. Dark current generating mechanisms in short wavelength infrared photovoltaic detectors
38. Status of infrared detectors
39. Infrared detectors in the next millennium
40. High performance HgCdTe two-color infrared detectors grown by molecular beam epitaxy
41. Molecular beam epitaxial growth and performance of integrated multispectral HgCdTe photodiodes for the detection of mid-wave infrared radiation
42. Molecular beam epitaxial growth and performance of HgCdTe-based simultaneous-mode two-color detectors
43. Two-color HgCdTe devices for multispectral applications
44. Independently-accessed back-to back HgCdTe photodiodes: A new dual-band infrared detector
45. MOCVD of bandgap-engineered HgCdTe p-n-N-P dual-band infrared detector arrays
46. Simultaneous MW/LW dualband MOCVD HgCdTe 64×64 FPAs
47. Multi-domain smart sensors
48. Integrated two-color detection for advanced FPA applications