-
1
-
-
0029304719
-
Independently-Accessed Back-to-Back HgCdTe Photodiodes: A New Dual-Band Infrared Detector
-
M. B. Reine, P. W. Norton, R. Starr, M. H. Weiler, M. Kestigian, B. L. Musicant, P. Mitra, T. Schimert, F. C. Case, I. B. Bhat, H. Ehsani and V. Rao, "Independently-Accessed Back-to-Back HgCdTe Photodiodes: A New Dual-Band Infrared Detector," Jour. Electronic Materials 24, 669-79 (1995).
-
(1995)
Jour. Electronic Materials
, vol.24
, pp. 669-679
-
-
Reine, M.B.1
Norton, P.W.2
Starr, R.3
Weiler, M.H.4
Kestigian, M.5
Musicant, B.L.6
Mitra, P.7
Schimert, T.8
Case, F.C.9
Bhat, I.B.10
Ehsani, H.11
Rao, V.12
-
2
-
-
0031144972
-
High Performance HgCdTe Two-Color Infrared Detectors Grown by Molecular Beam Epitaxy
-
R. D. Rajavel, D. M. Jamba, O. K. Wu, J. E. Jensen, J. A. Wilson, E. A. Patten, K. Kosai, P. Goetz, G. R. Chapman and W. A. Radford, "High Performance HgCdTe Two-Color Infrared Detectors Grown by Molecular Beam Epitaxy," Jour. Crystal Growth 175/176, 653 (1997).
-
(1997)
Jour. Crystal Growth
, vol.175-176
, pp. 653
-
-
Rajavel, R.D.1
Jamba, D.M.2
Wu, O.K.3
Jensen, J.E.4
Wilson, J.A.5
Patten, E.A.6
Kosai, K.7
Goetz, P.8
Chapman, G.R.9
Radford, W.A.10
-
3
-
-
0344165593
-
MOCVD of Bandgap-Engineered HgCdTe p-n-N-P Dual-Band Infrared Detector Arrays
-
P. Mitra, S. L. Barnes, F. C. Case, M. B. Reine, P. O'Dette, R. Starr, A. Hairston, K. Kuhler, M. H. Weiler and B. L. Musicant, "MOCVD of Bandgap-Engineered HgCdTe p-n-N-P Dual-Band Infrared Detector Arrays," Jour. Electronic Materials 26, 482 (1997).
-
(1997)
Jour. Electronic Materials
, vol.26
, pp. 482
-
-
Mitra, P.1
Barnes, S.L.2
Case, F.C.3
Reine, M.B.4
O'Dette, P.5
Starr, R.6
Hairston, A.7
Kuhler, K.8
Weiler, M.H.9
Musicant, B.L.10
-
4
-
-
58749088657
-
-
S. J. C. Irvine, Metal-Organic Vapor Phase Epitaxy, Chap. 3, pp. 71-96, Narrow-Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications, ed. by P. Capper (Chapman & Hall, London, 1997).
-
S. J. C. Irvine, "Metal-Organic Vapor Phase Epitaxy," Chap. 3, pp. 71-96, Narrow-Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications, ed. by P. Capper (Chapman & Hall, London, 1997).
-
-
-
-
5
-
-
58749096811
-
-
O. K. Wu, T. J. DeLyon, R. D. Rajavel and J. E. Jensen, Molecular Beam Epitaxy of HgCdTe, Chap. 4, pp. 97-130, Narrow-Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications, ed. by P. Capper (Chapman & Hall, London, 1997).
-
O. K. Wu, T. J. DeLyon, R. D. Rajavel and J. E. Jensen, "Molecular Beam Epitaxy of HgCdTe, Chap. 4, pp. 97-130, Narrow-Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications, ed. by P. Capper (Chapman & Hall, London, 1997).
-
-
-
-
6
-
-
58749086306
-
Double Direct Injection Dual Band Sensor Readout Input Circuit,
-
U. S. Patent 5,523,570, June 4
-
Allen W. Hairston, "Double Direct Injection Dual Band Sensor Readout Input Circuit," U. S. Patent 5,523,570, June 4, 1996.
-
(1996)
-
-
Hairston, A.W.1
-
7
-
-
0030713597
-
Doping in MOVPE of HgCdTe: Orientation Effects and in situ Growth of High Performance IR Photodiodes
-
P. Mitra, F. C. Case, M. B. Reine, R. Starr and M. H. Weiler, "Doping in MOVPE of HgCdTe: Orientation Effects and in situ Growth of High Performance IR Photodiodes," Jour. Crystal Growth. 170, 542-548 (1997).
-
(1997)
Jour. Crystal Growth
, vol.170
, pp. 542-548
-
-
Mitra, P.1
Case, F.C.2
Reine, M.B.3
Starr, R.4
Weiler, M.H.5
-
8
-
-
0029378984
-
Metalorganic Chemical Vapor Deposition of HgCdTe p/n Junctions Using Arsenic and Iodine Doping
-
P. Mitra, T. R. Schimert, F. C. Case, S. L. Barnes, M. B. Reine, R. Starr, M. H. Weiler and M. Kestigian, "Metalorganic Chemical Vapor Deposition of HgCdTe p/n Junctions Using Arsenic and Iodine Doping," Jour. Electronic Materials 24, 1077-85 (1995).
-
(1995)
Jour. Electronic Materials
, vol.24
, pp. 1077-1085
-
-
Mitra, P.1
Schimert, T.R.2
Case, F.C.3
Barnes, S.L.4
Reine, M.B.5
Starr, R.6
Weiler, M.H.7
Kestigian, M.8
|