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Infrared Physics and Technology

Volumn 38, Issue 7, 1997, Pages 397-403

High performance uncooled inAsSbP/inGaAs photodiodes for the 1.8-3.4 μm wavelength range

(2) Krier, A a Mao, Y a

a LANCASTER UNIVERSITY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; INFRARED DETECTORS; LIQUID PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

HETEROJUNCTION PHOTODIODES;

PHOTODIODES;

EID: 0031356640 PISSN: 13504495 EISSN: None Source Type: Journal
DOI: 10.1016/S1350-4495(97)00040-6 Document Type: Article

Times cited : (36)

References (10)

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2
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3
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- ETX-GR Series, private communication
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- Epitaxx Optoelectronic Devices, High Sensitivity 2.5 μm Cutoff Wavelength InGaAs Photodiodes , pp. 4-94

4
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- private communication
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- Indium Arsenide Detector Operating Notes , pp. 14-17

5
- 0028761142
- Liquid phase epitaxial growth and photoluminescence of Mn-doped InGaAs with InAs-enriched composition
- M.K. Parry, A. Krier, Liquid phase epitaxial growth and photoluminescence of Mn-doped InGaAs with InAs-enriched composition, J. Cryst. Growth 139 (1994) 238-246.
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- Wilson, M.R.¹ Krier, A.² Mao, Y.³

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- Parry, M.K.¹ Krier, A.²

8
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