High performance HgCdTe two-color infrared detectors grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 653-658

  Rajavel, R D ^a   Jamba, D M ^a   Wu, O K ^a   Jensen, J E ^a   Wilson, J A ^b   Patten, E A ^b   Kosai, K ^b   Goetz, P ^b   Chapman, G R ^b   Radford, W A ^b  

^a Hughes Aircraft Co   (United States)

^b Santa Barbara Research Center   (United States)

Author keywords

HgCdTe; In situ doped; MBE; Multispectral; Sequential; Two color detector

Indexed keywords

ELECTRICAL ENGINEERING; MOLECULAR BEAM EPITAXY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; X RAY CRYSTALLOGRAPHY;

ETCH PIT DENSITIES; MERCURY CADMIUM TELLURIDE; TWO COLOR INFRARED DETECTORS;

INFRARED DETECTORS;

EID: 0031144972     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01200-6     Document Type: Article

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