Applications of near-infrared imaging

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3379, Issue , 1998, Pages 300-306

  Olsen, Gregory H ^a   Cohen, Marshall J ^a  

^a GOODRICH CORPORATION   (United States)

Author keywords

Focal Plane Array; FPA; Indium gallium arsenide; InGaAs; NIR Imaging

Indexed keywords

ARSENIC COMPOUNDS; DETECTORS; FOCAL PLANE ARRAYS; GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; INDIUM; INDIUM ALLOYS; INDIUM ARSENIDE; INFRARED DETECTORS; INFRARED DEVICES; INFRARED IMAGING; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; TERNARY ALLOYS; THERMOGRAPHY (IMAGING);

FOCAL PLANE ARRAY; FPA; INDIUM GALLIUM ARSENIDE; INGAAS; NIR IMAGING;

FOCUSING;

EID: 0000993637     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.317597     Document Type: Conference Paper

References (5)

1. G.H. Olsen, "Long Wavelength Components by Vapor Phase Epitaxy," Laser Focus World, January 1985.
2. M.J. Cohen and G.H. Olsen, "Near-IR Imaging Cameras Operate at Room Temperature," Laser Focus World, June, 1993.
3. L.J. Kozlowski, K. Vural, W.E. Kleinhans, T. Liu, G.H. Olsen, and M.J. Cohen, "Attainment of High D* at Room Temperature via Gate-Modulated Detector Interface", Proceedings of SPIE Aerospace Sensing Conference, Orlando, FL, 1996.
4. "A Broad Spectrum of Uses for Near-Infrared," Business Week, September 8, 1997.
5. D.S. Kim, S.R. Forrest, M.J. Lange, G.H. Olsen, and W. Kosonockt, "A Monolithically Integrated InGaAs-InP p-i-n/JFET Focal Plane Array," IEEE Photonics Technology Letters, Vol. 8, p. 566, 1996.