Scanning tunneling microscope studies on recovery processes of sputter-induced surface defects on Si(111)-7×7

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 6 SUPPL. B, 1996, Pages 3719-3723

  Yoneyama, Kazuya ^a,b   Ogawa, Keiichi ^a  

^a YOKOHAMA CITY UNIVERSITY   (Japan)

^b Fuji Photo Optical Co Ltd   (Japan)

Author keywords

Activation free energy; Ar ion bombardment; Metastable 7 7; Recovery process; Scanning Tunneling Microscopy (STM); Si(111) 7 7; Surface defect

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ATOMS; CHARACTERIZATION; CRYSTAL DEFECTS; ENTROPY; ION BOMBARDMENT; RECOVERY; SEMICONDUCTING SILICON; SURFACE STRUCTURE;

ADATOMS; METASTABLE; RECOVERY PROCESSES; SINGLE ACTIVATION FREE ENERGIES; SPUTTER INDUCED SURFACE DEFECTS; VACANT REGIONS;

SCANNING TUNNELING MICROSCOPY;

EID: 0030172932     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.3719     Document Type: Article

References (8)

1. G. Binnig and H. Rohrer: Surf. Sci. 126 (1983) 236.
2. H. J. Zandvilet, H. B. Elswijk and E. J. van Loenen: Phys. Rev. B 46 (1992) 7581.
3. P. Bedrossian and T. Klitsner: Phys. Rev. B 44 (1991) 13783.
4. I. H. Wilson, N. J. Zheng, U. Knipping and I. S. T. Tsong: Appl. Phys. Lett. 53 (1988) 2039.
5. M. Ichikawa and T. Doi: Appl. Phys. Lett. 50 (1987) 1141.
6. H. Uchida, D. Huang, F. Grey and M. Aono: Phys. Rev. Lett. 70 (1993) 2040.
7. E. Ganz, S. K. Theiss, I-S. Huang and J. Golovachenko: Phys. Rev. Lett. 68 (1992) 1567.
8. E. Kaxiras and J. Erlebacher: Phys. Rev. Lett. 72 (1994) 1714.