Mechanism of structural changes of Si(111) surfaces subjected to low-energy ion pulses during molecular-beam epitaxy

Journal of Experimental and Theoretical Physics

Volumn 87, Issue 6, 1998, Pages 1116-1121

  Dvurechenskii A V ^a   Zinov'ev, V A ^a   Markov, V A ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33744662910     PISSN: 10637761     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.558602     Document Type: Article

References (12)

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