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Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 22, 2001, Pages 2241121-2241126

Identification of open-volume defects in disordered and amorphized Si: A depth-resolved positron annihilation study

(8) Amarendra, G a Rajaraman, R a Venugopal Rao, G a Nair, K G a Viswanathan, B a Suzuki, R b Ohdaira, T b Mikado, T b

a INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH (India)

b ELECTROTECHNICAL LABORATORY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; SILICON DIOXIDE;

ARTICLE; COMPUTER SIMULATION; IRRADIATION; POSITRON; SEMICONDUCTOR;

EID: 0034895926 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/physrevb.63.224112 Document Type: Article

Times cited : (32)

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