Selective high-resolution electrodeposition on semiconductor defect patterns

Physical Review Letters

Volumn 85, Issue 14, 2000, Pages 2985-2988

  Schmuki, P ^a,b   Erickson, L E ^c  

^a EPFL   (Switzerland)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRIC BREAKDOWN; ELECTROLYTES; ION BEAMS; ION BOMBARDMENT; METALS; POLARIZATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS; SURFACE PROPERTIES; THRESHOLD VOLTAGE;

CATHODIC ELECTROCHEMICAL POLARIZATION; SELECTIVE HIGH RESOLUTION ELECTRODEPOSITION; SEMICONDUCTOR DEFECT PATTERNS;

ELECTRODEPOSITION;

EID: 11144261636     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.2985     Document Type: Article

References (42)

1. L. T. Romankiw and T. A. Palumbo, in Electrodeposition Technology, Theory and Practice, edited by L. T. Romankiw and D. R. Turner (Electrochemical Society, Pennington, NJ, 1987), Vol. PV/87-17, p. 764.
2. P. S. Searson and T. P. Moffat, Crit. Rev. Surf. Chem. 3, 171 (1994).
3. H. Morinaga, M. Suyama, and T. Ohmi, J. Electrochem. Soc. 141, 2834 (1994).
4. G. J. Norga, M. Platero, K. A. Black, A. J. Reddy, J. Michel, and L. C. Kimerlin, J. Electrochem. Soc. 144, 2801 (1997).
5. C.-A. Chang, J. Appl. Phys. 67, 566 (1989).
6. J. Li and Y. Sacham-Diamand, J. Electrochem. Soc. 137, L37 (1992).
7. C. H. Ting and M. Paunovic, J. Electrochem. Soc. 136, 456 (1989).
8. S. Furukawa and M. Mehregany, Sens. Actuators A 56, 261 (1996).
9. P. Gorostiza, J. Servat, R. Diaz, F. Sanz, and J. R. Morante, MRS Proc. 451, 275 (1997).
10. P. M. Hoffman, J. G. Long, P. J. Moran, and P. Searson, ECS Meeting Abstracts 98-1, 246 (1998).
11. G. Oskam, D. vanHeerden, and P. C. Searson, Appl. Phys. Lett. 73, 3241 (1998).
12. L. A. D'Asaro, S. Nakahara, and Y. Okinaka, J. Electrochem. Soc. 127, 1935 (1989).
13. P. Bindra, H. Gerischer, and D. M. Kolb, J. Electrochem. Soc. 124, 1012 (1977).
14. R. Reineke and R. Memming, Surf. Sci. 192, 66 (1987).
15. P. Allongue and E. Souteyrand, J. Vac. Sci. Technol. B 5, 1644 (1987).
16. G. Oskam, L. Bart, D. Vanmaekelbergh, and J. J. Kelly, J. Appl. Phys. 74, 3238 (1993).
17. G. Oskam, D. Vanmaekelbergh, and J. J. Kelly, Electrochim. Acta 38, 1115 (1993).
18. P. Allongue and E. Souteyrand, J. Electroanal. Chem. 362, 79 (1993).
19. G. Scherb and D. M. Kolb, J. Electroanal. Chem. 396, 151 (1995).
20. P. M. Vereecken, K. Strubbe, and W. P. Gomes, J. Electroanal. Chem. 433, 19 (1997).
21. P. C. Andricanos, C. Uzoh, J. O. Dukovic, J. Horkans, and H. Deligianni, IBM J. Res. Dev. 42, 567 (1998).
22. P. C. Andricanos, Electrochem. Soc. Interface 8, 32 (1999).
23. Electron-beam, X-ray, and Ion-beam Submicrometer Lithographies for Manufacturing, edited by M. Peckerar, SPIE Proceedings (SPIE-International Society for Optical Engineering, Bellingham, WA, 1991), p. 1465; ibid. (1992), p. 1671; ibid., edited by D. O. Patterson (1993), p. 1924; ibid. (1994), p. 2194; ibid., edited by J. M. Warlaumont (1995), p. 2437; ibid., edited by D. E. Seeger (1996), p. 2723.
24. Electron-beam, X-ray, and Ion-beam Submicrometer Lithographies for Manufacturing, edited by M. Peckerar, SPIE Proceedings (SPIE-International Society for Optical Engineering, Bellingham, WA, 1991), p. 1465; ibid. (1992), p. 1671; ibid., edited by D. O. Patterson (1993), p. 1924; ibid. (1994), p. 2194; ibid., edited by J. M. Warlaumont (1995), p. 2437; ibid., edited by D. E. Seeger (1996), p. 2723.
25. Electron-beam, X-ray, and Ion-beam Submicrometer Lithographies for Manufacturing, edited by M. Peckerar, SPIE Proceedings (SPIE-International Society for Optical Engineering, Bellingham, WA, 1991), p. 1465; ibid. (1992), p. 1671; ibid., edited by D. O. Patterson (1993), p. 1924; ibid. (1994), p. 2194; ibid., edited by J. M. Warlaumont (1995), p. 2437; ibid., edited by D. E. Seeger (1996), p. 2723.
26. Electron-beam, X-ray, and Ion-beam Submicrometer Lithographies for Manufacturing, edited by M. Peckerar, SPIE Proceedings (SPIE-International Society for Optical Engineering, Bellingham, WA, 1991), p. 1465; ibid. (1992), p. 1671; ibid., edited by D. O. Patterson (1993), p. 1924; ibid. (1994), p. 2194; ibid., edited by J. M. Warlaumont (1995), p. 2437; ibid., edited by D. E. Seeger (1996), p. 2723.
27. Electron-beam, X-ray, and Ion-beam Submicrometer Lithographies for Manufacturing, edited by M. Peckerar, SPIE Proceedings (SPIE-International Society for Optical Engineering, Bellingham, WA, 1991), p. 1465; ibid. (1992), p. 1671; ibid., edited by D. O. Patterson (1993), p. 1924; ibid. (1994), p. 2194; ibid., edited by J. M. Warlaumont (1995), p. 2437; ibid., edited by D. E. Seeger (1996), p. 2723.
28. Electron-beam, X-ray, and Ion-beam Submicrometer Lithographies for Manufacturing, edited by M. Peckerar, SPIE Proceedings (SPIE-International Society for Optical Engineering, Bellingham, WA, 1991), p. 1465; ibid. (1992), p. 1671; ibid., edited by D. O. Patterson (1993), p. 1924; ibid. (1994), p. 2194; ibid., edited by J. M. Warlaumont (1995), p. 2437; ibid., edited by D. E. Seeger (1996), p. 2723.
29. E. Spiller, R. Feder, J. Topalian, E. Castellani, L. Romankiw, and M. Heritage, Solid State Technol. (1976).
30. W. E. Becker, W. Ehrfeld, D. Munchmeyer, H. Betz, A. Heuberger, S. Pongratz, W. Glashauser, H. J. Michel, and V. R. Siemens, Naturwissenschaften 69, 520 (1982).
31. K. Uosaki and H. Kita, J. Electroanal. Chem. 239, 301 (1989).
32. U. Schmidt, S. Vinzelberg, and G. Staikov, Surf. Sci. 348, 261 (1996).
33. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
34. H. G. Robinson, C. C. Lee, T. E. Haynes, E. L. Allen, M. D. Deal, and K. D. Jones, Mater. Res. Soc. Symp. Proc. 354, 337 (1995).
35. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).
36. P. Schmuki, L. E. Erickson, G. Champion, B. F. Mason, J. W. Fraser, and C. Moessner, Appl. Phys. Lett. 70, 1307 (1997).
37. P. Schmuki, L. E. Erickson, and D. J. Lockwood, Phys. Rev. Lett. 80, 4060 (1998).
38. E. Budewski, G. Staikov, and W. Lorenz, Electrochemical Phase Formation and Growth (VCH, Weinheim, 1996).
39. M. Volmer and A. Weber, Z. Phys. Chem. 119, 277 (1927).
40. P. Schmuki, L. E. Erickson, D. J. Lockwood, B. F. Mason, J. W. Fraser, G. Champion, and H. J. Labbé, J. Electrochem. Soc. 146, 735 (1999).
41. R. J. Culbertson, D. W. Holland, K. J. Jones, and K. Maex, Materials Synthesis and Processing Using Ion Beams (Materials Research Society, Pittsburgh, 1994).
42. L. E. Erickson, H. G. Champion, J. W Fraser, R. Hussey, P. Schmuki, and C. Porco, J. Vac. Sci. Technol. B 15, 2358 (1997).