Study of argon-irradiation-induced defects and amorphization in silicon using a positron beam, Raman spectroscopy and ion channelling

Journal of Physics Condensed Matter

Volumn 11, Issue 30, 1999, Pages 5875-5887

  Amarendra, G ^a   Venugopal Rao, G ^a   Arora, A K ^a   Nair, K G M ^a   Ravindran, T R ^a   Sekar, K ^b   Sundarvel, B ^b   Viswanathan, B ^a  

^a INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

^b INSTITUTE OF PHYSICS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001378650     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/11/30/316     Document Type: Article

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