MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers

Journal of Crystal Growth

Volumn 223, Issue 3, 2001, Pages 341-348

  Wilk, A ^a   Genty, F ^a   Fraisse, B ^b   Boissier, G ^a   Grech, P ^a   El Gazouli, M ^a   Christol, P ^c   Oswald, J ^d   Simecek, T ^d   Hulicius, E ^d   Joullie A ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b UNIVERSITÉ DE MONTPELLIER   (France)

^c UNIVERSITY OF AVIGNON   (France)

^d INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; INFRARED DEVICES; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; STOICHIOMETRY; TERNARY SYSTEMS;

MID-INFRARED LASERS; QUASI-STOICHIOMETRIC GROWTH (QSG);

QUANTUM WELL LASERS;

EID: 0034824826     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00600-5     Document Type: Article

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