SCOPUS 정보 검색 플랫폼

Volumn 28, Issue 10, 1996, Pages 1229-1238

Semiconductor lasers with unconventional cladding structures for small beam divergence and low threshold current

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); CURRENT DENSITY; HETEROJUNCTIONS; LASER BEAMS; OPTIMIZATION; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

BEAM DIVERGENCE; CONFINEMENT FACTOR; FAR FIELD ANGLE; GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE; LOW THRESHOLD CURRENT; OPTICAL CAVITY;

SEMICONDUCTOR LASERS;

EID: 0030259713 PISSN: 03068919 EISSN: None Source Type: Journal
DOI: 10.1007/BF00326196 Document Type: Article

Times cited : (7)

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