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Journal of Photopolymer Science and Technology

Volumn 13, Issue 4, 2000, Pages 539-544

Lithographic performances of non-chemically amplified resist and chemically amplified resist for 193nm top surface imaging process

(2) Koh, Cha Won a Baik, Ki Ho a

a Hynix Semiconductor Inc (South Korea)

Author keywords

ArF lithography; Car; Dry development; Non chemically amplified resist; Pattern collapse; Top surface imaging by silylation

Indexed keywords

PHENOL DERIVATIVE; POLYMER; SILANE DERIVATIVE;

ADHESION; ARTICLE; CHEMICAL ANALYSIS; CHEMICAL REACTION; ILLUMINATION; IMAGING; LITHOGRAPHY; PHOTOCHEMISTRY; REACTION ANALYSIS; RIGIDITY; SURFACE PROPERTY; TECHNIQUE; TEMPERATURE;

EID: 0034584065 PISSN: 09149244 EISSN: None Source Type: Journal
DOI: 10.2494/photopolymer.13.539 Document Type: Article

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.