Negative-tone TSI process for 193-nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3333, Issue , 1998, Pages 188-194

  Kuhara, Koichi ^a   Mori, Shigeyasu ^a   Kaimoto, Yuko ^a   Morisawa, Taku ^a   Ohfuji, Takeshi ^a   Sasago, Masaru ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

193 nm; ArF; Chemically amplified resist; Dry development; High sensitivity; Lithography; Negative tone; Resist; Top surface imaging

Indexed keywords

LITHOGRAPHY; PHOTORESISTORS; PHOTORESISTS; REACTIVE ION ETCHING; THICKNESS MEASUREMENT;

193-NM; ARF; CHEMICALLY AMPLIFIED RESIST; DRY DEVELOPMENT; HIGH SENSITIVITY; NEGATIVE-TONE; RESIST; TOP SURFACE IMAGING;

SILANES;

EID: 0001757286     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.312407     Document Type: Conference Paper

References (6)

1. M. A. Hartney, R. R. Kunz, D. J. Ehrlich, D. C. Shaver, Proceeding of the SPIE, vol. 1262, p. 119 (1990)
2. D. W. Johnson, M. A. Hartney, Japanese Journal of Applied Physics, Part1, vol.31, No. 12B, p.4321 (1992)
3. S. Mori, K. Kuhara, T. Ohfuji, and M. Sasago, Proceeding of the SPIE, vol.3049, p. 146 (1997)
4. S. Mori, T. Morisawa, N. Matsuzawa, Y.Kaimoto, M. Endo, T. Matsuo, M, Takahashi, T. Naito, Y.Naruse, S. Kishimura, S. Takechi, A. Yamaguchi, M.Uematsu, T. Onodera, K. Nakazawa, K. Kamon, T. Tatsumi, S. Morishita, K. Kuhara, T. Ohfuji, T. Ogawa, H. Ohtsuka, M. Inoue, M. Sasago, IEDM Tech. Dig., 933 (1997)
5. F. Coopmans, B. Roland: DESIRE:A new route to submicron optical lithography, Solid State Technology, p.93, June, 1987
6. M. Op de Beeck and L. Van den hove: Silylation of novolac based resists: Influencs of deep-ultraviolet induced crosslinking, J. Vac. Sci. Technol., B 10, p701 (1992)